Germanium on Silicon for Near-Infrared Light Sensing

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa str...

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Group IV photonics hold great potential for nonlinear applications in the nearand mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We ...

Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates

Germanium-on-Silicon for Integrated Silicon Photonics

To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that can be built using existing CMOS fabrication facilities offers the tantalizing prospect of a scalable and cost-efficient solution to replace electrical interconnects. Silicon, ...

Near-infrared wavefront sensing

We discuss the advantages of wavefront sensing at near-infrared (IR) wavelengths with low-noise detector technologies that have recently become available. In this paper, we consider low order sensing with laser guide star (LGS) adaptive optics (AO) and high order sensing with natural guide star (NGS) AO. We then turn to the application of near-IR sensing with the W. M. Keck Observatory (WMKO) A...